Growth of Si/β-FeSi<sub>2</sub>/Si double-heterostructures on Si(111) substrates by molecular-beam epitaxy and photoluminescence using time-resolved measurements

TAKAUJI M; SEKI N; SUEMASU T; HASEGAWA F; ICHIDA M

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J-GLOBAL ID：200902235802600533 Reference number：04A0711779

Growth of Si/β-FeSi₂/Si double-heterostructures on Si(111) substrates by molecular-beam epitaxy and photoluminescence using time-resolved measurements

分子線エピタクシーによるSi(111)基板上のSi/β-FeSi₂/Si二重ヘテロ構造の成長と時間分解測定による光ルミネセンス

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Author (5)： , , , ,
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Volume： 96 Issue： 5 Page： 2561-2565 Publication year： Sep. 01, 2004
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Luminescence of semiconductors , Semiconductor thin films , Semiconductor-semiconductor contacts without Gr.13-15 element compounds

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Growth of Si/β-FeSi2/Si double-heterostructures on Si(111) substrates by molecular-beam epitaxy and photoluminescence using time-resolved measurements

Growth of Si/β-FeSi₂/Si double-heterostructures on Si(111) substrates by molecular-beam epitaxy and photoluminescence using time-resolved measurements