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J-GLOBAL ID:200902236169139577   Reference number:07A0607089

Realization of highly reproducible ZnO nanowire field effect transistors with n-channel depletion and enhancement modes

nチャネル・ディプリーションモードとエンハンスメントモードを持つ高い再生産可能なZnOナノワイヤ電界効果型トランジスタの実現
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Volume: 90  Issue: 24  Page: 243103  Publication year: Jun. 11, 2007 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Oxide thin films  ,  Transistors 
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