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J-GLOBAL ID：200902236169139577   Reference number：07A0607089

Realization of highly reproducible ZnO nanowire field effect transistors with n-channel depletion and enhancement modes

nチャネル・ディプリーションモードとエンハンスメントモードを持つ高い再生産可能なZnOナノワイヤ電界効果型トランジスタの実現

Author (9)： HONG Woong-ki (Dep. of Materials Sci. and Engineering, Gwangju Inst. of Sci. and Technol., 1 Oryong-dong, Buk-gu, Gwangju 500-712, KOR) ,  HWANG Dae-kue (Dep. of Materials Sci. and Engineering, Gwangju Inst. of Sci. and Technol., 1 Oryong-dong, Buk-gu, Gwangju 500-712, KOR) ,  PARK Il-kyu (Dep. of Materials Sci. and Engineering, Gwangju Inst. of Sci. and Technol., 1 Oryong-dong, Buk-gu, Gwangju 500-712, KOR) ,  JO Gunho (Dep. of Materials Sci. and Engineering, Gwangju Inst. of Sci. and Technol., 1 Oryong-dong, Buk-gu, Gwangju 500-712, KOR) ,  SONG Sunghoon (Dep. of Materials Sci. and Engineering, Gwangju Inst. of Sci. and Technol., 1 Oryong-dong, Buk-gu, Gwangju 500-712, KOR) ,  PARK Seong-ju (Dep. of Materials Sci. and Engineering, Gwangju Inst. of Sci. and Technol., 1 Oryong-dong, Buk-gu, Gwangju 500-712, KOR) ,  LEE Takhee (Dep. of Materials Sci. and Engineering, Gwangju Inst. of Sci. and Technol., 1 Oryong-dong, Buk-gu, Gwangju 500-712, KOR) ,  KIM Bong-joong (School of Materials Engineering, Purdue Univ., 501 Northwestern Avenue, West Lafayette, Indiana 47907 and Birck ...) ,  STACH Eric A. (School of Materials Engineering, Purdue Univ., 501 Northwestern Avenue, West Lafayette, Indiana 47907 and Birck ...)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 90  Issue： 24  Page： 243103  Publication year： Jun. 11, 2007 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *zinc oxide ,...
Semi thesaurus term： ZnO ,...

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JST classification (2)： Oxide thin films  (BK14050P) ,  Transistors  (NC03070N)

Terms in the title (4)： Nチャネル ,  エンハンスメントモード ,  ZnOナノワイヤ ,  電界効果型トランジスタ