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J-GLOBAL ID:200902236588214058   Reference number:07A1216170

On the fault tolerance of a clustered single-electron neural network for differential enhancement

差異増強のためのクラスター化単電子ニューラルネットワークの障害耐久力(フォールトトレランス)について
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Volume:Issue:Page: 76-80 (J-STAGE)  Publication year: 2005 
JST Material Number: U0039A  ISSN: 1349-2543  Document type: Article
Article type: 短報  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Other electronic circuits 
Reference (5):
  • [1] T. Asai, M. Ohtani, and H. Yonezu, “Analog integrated circuits for the Lotka-Volterra competitive neural networks, ”IEEE Trans. Neural Networks, vol. 10, no. 5, pp. 1222-1231, 1999.
  • [2] A. Schmid and Y. Leblebici, “Robust Circuit and System Design Methodologies for Nanometer-Scale Devices and Single-Electron Transistors, ” Proc. IEEE-NANO03, vol. 2, pp. 516-519, 2003.
  • [3] T. Oya, T. Asai, R. Kagaya, T. Hirose, and Y. Amemiya, “Neuromorphic Single-Electron Circuit and Its Application to Temporal-Domain Neural Competition, ”Proc. 2004 Int. Symp. on NOLTA, pp. 235-239, 2004.
  • [4] T. Oya, T. Asai, T. Fukui, and Y. Amemiya, “Reaction-Diffusion Systems Consisting of Single-Electron Oscillators, ”Int. J. Unconventional Computing, vol. 1, no. 2, 2005.
  • [5] T. Yamada, M. Akazawa, T. Asai, and Y. Amemiya, “Boltzmann machine neural network devices using single-electron tunneling, ”Nanotechnology, vol. 12, no. 1, pp. 60-67, 2001.

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