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J-GLOBAL ID：200902236678159889   Reference number：06A0678556

Enhanced Reliability of Thermal Oxides Grown on 4H-SiC Substrates

4H-SiC基板上に形成された熱酸化膜の高信頼化技術

Author (2)： SENZAKI JUNJI (産業技術総合研 パワーエレクトロニクス研究セ) ,  FUKUDA KENJI (産業技術総合研 パワーエレクトロニクス研究セ)
Material： 電子情報通信学会論文誌 C  (IEICE Transactions on Electronics (Japanese Edition))
Volume： J89-C  Issue： 9  Page： 597-603  Publication year： Sep. 01, 2006 
JST Material Number： S0623C  ISSN： 1345-2827  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： hydrogenation ,...
Semi thesaurus term： accelerated test

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JST classification (2)： Oxide thin films  (BK14050P) ,  Reliability  (KB04040H)

Reference (10)：

• H. Yano, T. Hirao, T. Kimoto, H. Matsunami, K. Asano, and Y. Sugawara, “High channel mobility in inversion layers of 4H-SiC MOSFET’s by utilizing (100) face,” IEEE Electron Device Lett., vol.20, no.12, pp. 611-613, Dec.1999.
• G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, R. A. Weller, S. T. Pantelides, L. C. Feldman, O. W. Holland, M. K. Das, and J. W. Palmour, “Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide,” IEEE Electron Device Lett., vol.33, no.4, pp. 176-178, April 2001.
• R. Kosugi, S. Suzuki, M. Okamoto, S. Harada, J. Snezaki, and K. Fukuda, “Strong dependence of the inversion mobility of 4H and 6H SiC (0001) MOS-FETs on the water content in pyrogenic re-oxidation annealing,” IEEE Electron Device Lett., vol.23, no.3, pp. 136-138, March 2002.
• J. Senzaki, K. Kojima, S. Harada, R. Kosugi, S. Suzuki, T. Suzuki, and K. Fukuda, “Excellent effects of hydrogen postoxidation annealing on inversion channel mobility of 4H-SiC MOSFET fabricated on (1120) face,” IEEE Electron Device Lett., vol.23, no.1, pp. 13-15, Jan.2002.
• K. Fukuda, M. Kato, K. Kojima, and J. Senzaki, “Effect of gate oxidation method on electrical properties of metal-oxide-semiconductor field-effect transistors fabricated on 4H-SiC C (0001) face,” Appl. Phys. Lett., vol.84, no.12, pp. 2088-2090, March 2004.

Terms in the title (2)： 4H-SiC ,  熱酸化膜