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J-GLOBAL ID：200902238987603559   Reference number：06A0300670

Modulation of NiGe/Ge Schottky barrier height by sulfur segregation during Ni germanidation

Niゲルマニウム化中の硫黄偏析によるNiGe/Ge Schottky障壁高さの変調

Author (5)： IKEDA Keiji (MIRAI Project, Assoc. of Super-Advanced Electronics Technol. (ASET), AIST Tsukuba West 7, 16-1, Onogawa, Tsukuba ...) ,  YAMASHITA Yoshimi (MIRAI Project, Assoc. of Super-Advanced Electronics Technol. (ASET), AIST Tsukuba West 7, 16-1, Onogawa, Tsukuba ...) ,  SUGIYAMA Naoharu (MIRAI Project, Assoc. of Super-Advanced Electronics Technol. (ASET), AIST Tsukuba West 7, 16-1, Onogawa, Tsukuba ...) ,  TAOKA Noriyuki (MIRAI Project, National Inst. of Advanced Industrial Sci. and Technol. (AIST), AIST Tsukuba West 7, 16-1, Onogawa ...) ,  TAKAGI Shin-ichi (MIRAI Project, National Inst. of Advanced Industrial Sci. and Technol. (AIST), AIST Tsukuba West 7, 16-1, Onogawa ...)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 88  Issue： 15  Page： 152115-152115-3  Publication year： Apr. 10, 2006 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： nickel base alloy ,...

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JST classification (1)： Semiconductor-metal contacts  (BM03084G)

Terms in the title (7)： Ni ,  ゲルマニウム ,  硫黄 ,  偏析 ,  Ge ,  Schottky障壁高さ ,  変調