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J-GLOBAL ID:200902240137265489   Reference number:05A0592701

Hooge noise parameter of epitaxial n-GaN on sapphire

サファイア上のエピタキシャルn-GaNのHooge雑音パラメータ
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Volume: 49  Issue:Page: 865-870  Publication year: Jun. 2005 
JST Material Number: H0225A  ISSN: 0038-1101  Document type: Article
Article type: 原著論文  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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Electric conduction in crystalline semiconductors 
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