Art
J-GLOBAL ID：200902240493676205
Reference number：03A0875464
Carrier Transport in Polycrystalline Silicon Photovoltaic Layer on Highly Textured Substrate
高度組織化構造の基板上の多結晶けい素光起電力層におけるキャリア輸送
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Author (9)：
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Material：
Volume：
42
Issue：
11
Page：
6753-6758
Publication year：
Nov. 15, 2003
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
Thesaurus term：
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Electric conduction in crystalline semiconductors
, Solar cell
Reference (18)：
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1) Some of the papers express the poly-Si thin films deposited at a low temperature by PECVD as microcrystalline Si(μc-Si).
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2) J. Meier, R. Fluckiger, H. Keppner, and A. Shah: Proc. 1st World Conference on Photovoltaic Energy Conversion (WCPEC), Hawaii, 1994, p. 409.
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3) K. Yamamoto, A. Nakajima, T. Suzuki, M. Yoshimi, H. Nishio and M. Izumina: Jpn. J. Appl. Phys. 33 (1994) L1751.
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4) M. A. Green: High Efficiency Silicon Solar Cells (Trans Tech Publications, Switzerland, 1987) p. 69.
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5) O. Kluth, O. Vetterl, R. Carius, F. Finger, S. Wieder, B. Rech and H. Wagner: Mater. Res. Soc. Symp. Proc. 557 (1999) 731.
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Terms in the title (5)：
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