Art

J-GLOBAL ID：200902241131125665   Reference number：09A1243734

Radical oxidation of germanium for interface gate dielectric GeO₂ formation in metal-insulator-semiconductor gate stack

金属-絶縁体-半導体ゲートスタックの界面ゲート絶縁体形成用としてのゲルマニウムのラジカル酸化

Author (9)： KOBAYASHI Masaharu (Dep. of Electrical Engineering, Stanford Univ., 420 Via Palou Mall, Stanford, California 94305, USA) ,  THAREJA Gaurav (Dep. of Electrical Engineering, Stanford Univ., 420 Via Palou Mall, Stanford, California 94305, USA) ,  ISHIBASHI Masato (Dep. of Electrical Engineering, Stanford Univ., 420 Via Palou Mall, Stanford, California 94305, USA) ,  SUN Yun (Stanford Synchrotron Radiation Lab., Stanford Linear Acceleration Center, Menlo Park, California 94305, USA) ,  GRIFFIN Peter (Dep. of Electrical Engineering, Stanford Univ., 420 Via Palou Mall, Stanford, California 94305, USA) ,  MCVITTIE Jim (Dep. of Electrical Engineering, Stanford Univ., 420 Via Palou Mall, Stanford, California 94305, USA) ,  PIANETTA Piero (Stanford Synchrotron Radiation Lab., Stanford Linear Acceleration Center, Menlo Park, California 94305, USA) ,  SARASWAT Krishna (Dep. of Electrical Engineering, Stanford Univ., 420 Via Palou Mall, Stanford, California 94305, USA) ,  NISHI Yoshio (Dep. of Electrical Engineering, Stanford Univ., 420 Via Palou Mall, Stanford, California 94305, USA)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 106  Issue： 10  Page： 104117  Publication year： Nov. 15, 2009 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： MOSFET ,  gate(semiconductor) ,  *insulating film ,  radical ,  oxygen ,  oxidation ,  *germanium oxide ,  film thickness ,  reaction rate ,  interface(surface) ,  state density ,  band-offset ,  leakage current ,  *MOS structure ,  capacitance-voltage characteristic ,  photoelectron spectrum
Semi thesaurus term： oxygen radical

JST classification (3)： Dielectrics in general  (BM05010F) ,  Oxide thin films  (BK14050P) ,  Metal-insulator-semiconductor structures  (BM03085X)

Terms in the title (7)： 絶縁体 ,  ゲートスタック ,  界面 ,  ゲート絶縁体 ,  ゲルマニウム ,  ラジカル ,  酸化