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J-GLOBAL ID：200902241355895113
Reference number：06A0421135
New Magnetic Flash Memory with FePt Magnetic Floating Gate
FePt磁気フローティングゲートを備えた新しい磁気フラッシュメモリー
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Author (7)：
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Material：
Volume：
45
Issue：
4B
Page：
3217-3221
Publication year：
Apr. 30, 2006
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor integrated circuit
Reference (12)：
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M. Takada, S. Kondoh, T. Sakaguchi, H. Choi, J.-C. Shim, H. Kurino and M. Koyanagi: IEDM Tech. Dig., 2003, p. 553.
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T. Sakaguchi. Y. G. Hong, M. Kobayashi, H. Choi, J. C. Shim, H. Kurino and M. Koyanagi: Jpn. J. Appl. Phys.43(2004)2203
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P. T. L. Minh, N. P. Thuy and N. T. N. Chan: J. Magn. Magn. Mater.277(2004)187.
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T. Shima, K. Takanashi, Y. K. Takahashi, K. Hono, G. Q. Li and S. Ishio: J. Magn. Magn. Mater.266(2003)171.
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S. Sun, C. B. Muray, D. Weller, L. Folks and A. Moser: Science 287(2000)1989.
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