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J-GLOBAL ID：200902241579731361   Reference number：07A1136700

Nanoionics-based resistive switching memories

ナノイオニクスをベースとした抵抗スイッチングメモリー
Author (4)：
WASER Rainer

About WASER Rainer

(RWTH Aachen Univ., Aachen, DEU)

About RWTH Aachen Univ., Aachen, DEU

, 
WASER Rainer

About WASER Rainer

(Forschungszentrum Juelich, Juelich, DEU)

About Forschungszentrum Juelich, Juelich, DEU

, 
AONO Masakazu

About AONO Masakazu

(National Inst. for Material Sci., Ibaraki, JPN)

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, 
AONO Masakazu

About AONO Masakazu

(JST-ICORP, Saitama, JPN)

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Material：
Nature Materials  (Nat Mater)

About Nature Materials


Volume： 6  Issue： 11  Page： 833-840  Publication year： Nov. 2007 
JST Material Number： W1364A  ISSN： 1476-1122  Document type： Article
Article type： 文献レビュー  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
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Technology

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,...
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Thesaurus term/Semi thesaurus term
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ナノイオニクス

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JST classification (2)：
JST classification
Category name(code) classified by JST.
Semiconductor integrated circuit 
(NC03162T)

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,  Memory units 
(JC04060F)

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抵抗スイッチング

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, 
メモリー

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