Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag

TRACY K M; HARTLIEB P J; EINFELDT S; DAVIS R F; HURT E H; NEMANICH R J

Art

J-GLOBAL ID：200902242827493550 Reference number：03A0665946

Electrical and chemical characterization of the Schottky barrier formed between clean n-GaN(0001) surfaces and Pt, Au, and Ag

清浄なn-GaN(0001)面とPt,Au及びAgとの間に形成されたSchottky障壁の電気的及び化学的評価

Publisher site Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=03A0665946&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=03A0665946&from=J-GLOBAL&jstjournalNo=C0266A") }}

Author (6)： , , , , ,
Material：
Volume： 94 Issue： 6 Page： 3939-3948 Publication year： Sep. 15, 2003
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

,...

To see more with JDream III (charged). {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=03A0665946&from=J-GLOBAL&jstjournalNo=C0266A") }}

Semiconductor-metal contacts , Electronic structure of surfaces

, , , , , ,

Return to Previous Page