Art

J-GLOBAL ID：200902242972000596   Reference number：08A1163657

Polymer electronic memories: Materials, devices and mechanisms

高分子電子メモリー:材料,素子および機構

Author (6)： LING Qi-dan (Dep. of Chemical and Biomolecular Engineering, National Univ. of Singapore, 10 Kent Ridge Crescent, Singapore 119260 ...) ,  LIAW Der-jang (Dep. of Chemical Engineering, National Taiwan Univ. of Sci. and Technol., 43, Section 4, Keelung Road, Taipei, Taiwan) ,  ZHU Chunxiang (SNDL, Dep. of Electrical and Computer Engineering, National Univ. of Singapore, 10 Kent Ridge Crescent, Singapore ...) ,  CHAN Daniel Siu-Hung (SNDL, Dep. of Electrical and Computer Engineering, National Univ. of Singapore, 10 Kent Ridge Crescent, Singapore ...) ,  KANG En-tang (Dep. of Chemical and Biomolecular Engineering, National Univ. of Singapore, 10 Kent Ridge Crescent, Singapore 119260 ...) ,  NEOH Koon-gee (Dep. of Chemical and Biomolecular Engineering, National Univ. of Singapore, 10 Kent Ridge Crescent, Singapore 119260 ...)
Material： Progress in Polymer Science  (Prog Polym Sci)
Volume： 33  Issue： 10  Page： 917-978  Publication year： Oct. 2008 
JST Material Number： B0802A  ISSN： 0079-6700  Document type： Article
Article type： 文献レビュー  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *functional polymer ,  *memory element ,  *switching element ,  technology development ,  technical progress ,  review ,  functional material ,  condenser (capacitor) ,  transistor ,  resistor ,  molecular structure
Semi thesaurus term： 高分子スイッチ ,  高分子電子メモリー

JST classification (2)： Products,semiproducts uses in general  (YH06010U) ,  Solic-state devices in general  (NC03010Z)

Terms in the title (3)： 高分子 ,  電子 ,  メモリー