Effect of Tl content on the growth of TlGaAs films by low-temperature molecular-beam epitaxy.

KAJIKAWA Y; KAMETANI M; KOBAYASHI N; NISHIMOTO N; YODO Y; KITANO Y; OHTANI Y

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J-GLOBAL ID：200902243349813299 Reference number：03A0117945

Effect of Tl content on the growth of TlGaAs films by low-temperature molecular-beam epitaxy.

低温分子線エピタクシーによるTlGaAs膜の成長に及ぼすTl含有量の効果

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Author (7)： , , , , , ,
Material：
Volume： 93 Issue： 3 Page： 1409-1416 Publication year： Feb. 01, 2003
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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