Art
J-GLOBAL ID：200902244464437710   Reference number：06A1016067

Semiconductor Light-Emitting Diodes with Separated Current-Injection and Light-Emitting Areas

電流注入と発光域が分離された半導体発光ダイオード
Author (1)：
WANG Xue-Lun

About WANG Xue-Lun

(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)

About National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN


Material：
Japanese Journal of Applied Physics. Part 2. Letters  (Japanese Journal of Applied Physics. Part 2. Letters & Express Letters)

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Volume： 45  Issue： 33-36  Page： L874-L877  Publication year： Sep. 25, 2006 
JST Material Number： F0599B  ISSN： 0021-4922  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)
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*light emitting diode

About light emitting diode

,...
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Thesaurus term/Semi thesaurus term
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All keywords is available on JDreamIII(charged).
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forbidden band

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JST classification (1)：
JST classification
Category name(code) classified by JST.
Light emitting devices 
(NC03082G)

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電流注入

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発光ダイオード

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