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J-GLOBAL ID：200902244663735576   Reference number：04A0304646

Theoretical study of band edges in porous silicon

多孔質シリコンにおけるバンド端の理論的研究
Author (3)：
YORIKAWA H

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(Utsunomiya Univ., Utsunomiya, JPN)

About Utsunomiya Univ., Utsunomiya, JPN

, 
SATO T

About SATO T

(Utsunomiya Univ., Utsunomiya, JPN)

About Utsunomiya Univ., Utsunomiya, JPN

, 
MURAMATSU S

About MURAMATSU S

(Utsunomiya Univ., Utsunomiya, JPN)

About Utsunomiya Univ., Utsunomiya, JPN


Material：
Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)

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Volume： 95  Issue： 7  Page： 3569-3572  Publication year： Apr. 01, 2004 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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*silicon

About silicon

,...
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Thesaurus term/Semi thesaurus term
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valence band

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JST classification (1)：
JST classification
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Electronic structure of crystalline semiconductors 
(BM02060N)

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Terms in the title (4)：
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多孔質シリコン

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, 
バンド端

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, 
理論

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, 
研究

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