Art
J-GLOBAL ID：200902245513004715   Reference number：04A0269709

Mapping the potential within a nanoscale undoped GaAs region using a scanning electron microscope

走査型電子顕微鏡を用いたナノスケールでのアンドープGaAs領域内におけるポテンシャルマッピング
Author (3)：
KAESTNER B

About KAESTNER B

(Univ. Cambridge, Cambridge, GBR)

About Univ. Cambridge, Cambridge, GBR

, 
SCHOENJAHN C

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(Univ. Cambridge, Cambridge, GBR)

About Univ. Cambridge, Cambridge, GBR

, 
HUMPHREYS C J

About HUMPHREYS C J

(Univ. Cambridge, Cambridge, GBR)

About Univ. Cambridge, Cambridge, GBR


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 84  Issue： 12  Page： 2109-2111  Publication year： Mar. 22, 2004 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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*heterojunction

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,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor-semiconductor contacts with Gr.13-15 element compounds 
(BM03082Y)

About Semiconductor-semiconductor contacts with Gr.13-15 element compounds

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
走査型電子顕微鏡

About 走査型電子顕微鏡

, 
ナノスケール

About ナノスケール

, 
GaAs

About GaAs

, 
ポテンシャル

About ポテンシャル

, 
マッピング

About マッピング


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