Optimization of Growth Parameters in Electron-Beam-Induced Orientation Selective Epitaxy of CeO<sub>2</sub>(100)/Si(100) Structures

INOUE T.; OHTAKE H.; OTANI J.; SHIDA S.

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J-GLOBAL ID：200902245777711878 Reference number：08A1099519

Optimization of Growth Parameters in Electron-Beam-Induced Orientation Selective Epitaxy of CeO₂(100)/Si(100) Structures

CeO₂(100)/Si(100)の電子ビーム誘起配向選択エピタクシーにおける成長パラメータの最適化

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Material：
Volume： 155 Issue： 11 Page： G237-G240 Publication year： 2008
JST Material Number： C0285A ISSN： 1945-7111 CODEN： JESOAN Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Solid-gos interface in general. , Bases,metal oxides

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Optimization of Growth Parameters in Electron-Beam-Induced Orientation Selective Epitaxy of CeO2(100)/Si(100) Structures

Optimization of Growth Parameters in Electron-Beam-Induced Orientation Selective Epitaxy of CeO₂(100)/Si(100) Structures