Art
J-GLOBAL ID：200902246424370534
Reference number：05A0703612
Highly Reliable 250 W GaN High Electron Mobility Transistor Power Amplifier
高信頼性の250W-GaN高電子移動度トランジスタ電力増幅器
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Author (1)：
Material：
Volume：
44
Issue：
7A
Page：
4896-4901
Publication year：
Jul. 15, 2005
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Amplification circuits
Reference (27)：
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1) L. F. Eastman: Int. Microwave Symp. Tech. Dig., 2002, p. 2273.
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2) J. W. Palmour, S. T. Sheppard, R. P. Smith, S. T. Allen, W. L. Pribble, T. J. Smith, Z. Ring, J. J. Sumakeris, A. W. Saxler and J. W. Miligan: IEDM Tech. Dig., 2001, p. 385.
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3) T. Kikkawa, N. Nagahara, N. Okamoto Y. Tateno, Y. Yamgaguchi, N. Hara, K. Joshin and P. M. Asbeck: IEDM Tech. Dig., 2001, p. 585.
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4) Y. Ando, Y. Okamoto, H. Miyamoto, T. Nakayama, T. Inoue and M. Kuzuhara: IEEE Electron Device Lett. 24 (2003) 289.
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5) Y.-F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra and P. Parikh: IEEE Electron Device Lett. 25 (2004) 117.
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