Art
J-GLOBAL ID：200902248983905238   Reference number：05A0432567

Luminescence properties of defects in GaN

GaNにおける欠陥の発光特性
Author (2)：
RESHCHIKOV Michael A.

About RESHCHIKOV Michael A.

(Virginia Commonwealth Univ., Virginia)

About Virginia Commonwealth Univ., Virginia

, 
MORKOC Hadis

About MORKOC Hadis

(Virginia Commonwealth Univ., Virginia)

About Virginia Commonwealth Univ., Virginia


Material：
Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)

About Journal of Applied Physics


Volume： 97  Issue： 6  Page： 061301.1-061301.95  Publication year： Mar. 15, 2005 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 文献レビュー  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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*gallium nitride

About gallium nitride

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Lattice defects in semiconductors 
(BK12040Q)

About Lattice defects in semiconductors

,  Luminescence of semiconductors 
(BM08092S)

About Luminescence of semiconductors

Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
GaN

About GaN

, 
欠陥

About 欠陥

, 
発光特性

About 発光特性


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