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J-GLOBAL ID:200902249937327200   Reference number:07A0478840

Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide

酸化ハフニウムを用いた不揮発性抵抗メモリの低パワースイッチング
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Volume: 46  Issue: 4B  Page: 2175-2179  Publication year: Apr. 30, 2007 
JST Material Number: G0520B  ISSN: 0021-4922  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Semiconductor integrated circuit 
Reference (11):
  • C. C. Hung, M. J. Kao, Y. S. Chen, Y. H. Wang, H. H. Hsu, C. M. Chen, Y. J. Lee, W. C. Chen, J. Y. Lee, W. S. Chen, W. C. Lin, K. H. Shen, J. H. Wei, L. C. Wang, K: L. Chen, S. Chao, D. D. Tang, and M.-J. Tsai: IEDM, Tech. Dig., 2004, p. 575.
  • S. Lai: IEDM, Tech. Dig., 2003, p. 257.
  • N. Mathur: Nature (London) 390(1997)229.
  • I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D.-S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U.-I. Chung, and J. T. Moon: IEDM, Tech. Dig., 2004, p. 587.
  • C. Rohde, B. J. Choi, D. S. Jeong, S. Choi, J. S. Zhao, and C. S. Hwang: Appl. Phys. Lett.86(2005)262907.
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