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J-GLOBAL ID:200902249937327200
Reference number:07A0478840
Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide
酸化ハフニウムを用いた不揮発性抵抗メモリの低パワースイッチング
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Author (8):
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Material:
Volume:
46
Issue:
4B
Page:
2175-2179
Publication year:
Apr. 30, 2007
JST Material Number:
G0520B
ISSN:
0021-4922
Document type:
Article
Article type:
原著論文
Country of issue:
Japan (JPN)
Language:
ENGLISH (EN)
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JST classification (1):
JST classification
Category name(code) classified by JST.
Semiconductor integrated circuit
Reference (11):
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C. C. Hung, M. J. Kao, Y. S. Chen, Y. H. Wang, H. H. Hsu, C. M. Chen, Y. J. Lee, W. C. Chen, J. Y. Lee, W. S. Chen, W. C. Lin, K. H. Shen, J. H. Wei, L. C. Wang, K: L. Chen, S. Chao, D. D. Tang, and M.-J. Tsai: IEDM, Tech. Dig., 2004, p. 575.
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S. Lai: IEDM, Tech. Dig., 2003, p. 257.
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N. Mathur: Nature (London) 390(1997)229.
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I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D.-S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U.-I. Chung, and J. T. Moon: IEDM, Tech. Dig., 2004, p. 587.
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C. Rohde, B. J. Choi, D. S. Jeong, S. Choi, J. S. Zhao, and C. S. Hwang: Appl. Phys. Lett.86(2005)262907.
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