Hf-doped and NH<sub>3</sub>-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift.

YANG C W; FANG Y K; LIN C S; TSAIR Y S; WANG W D; WANG M F; CHENG J Y; CHEN S C; LIANG M S

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J-GLOBAL ID：200902251215829094 Reference number：03A0752277

Hf-doped and NH₃-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift.

最小のドレイン電流低下とフラットバンドシフトを持ったHf-ドープとNH₃-窒化物の高Kゲート誘電体薄膜

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Author (9)： , , , , , , , ,
Material：
Volume： 39 Issue： 21 Page： 1499-1501 Publication year： Oct. 16, 2003
JST Material Number： A0887A ISSN： 0013-5194 CODEN： ELLEAK Document type： Article
Article type：原著論文 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

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Insulating materials , Manufacturing technology of solid-state devices , Oxide thin films

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Hf-doped and NH3-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift.

Hf-doped and NH₃-nitrided high-K gate dielectric thin film with least drain current degradation and flatband voltage shift.