An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption

HA Y H; YI J H; HORII H; PARK J H; JOO S H; PARK S O; CHUNG U I; MOON J T

Art

J-GLOBAL ID：200902251228540484 Reference number：03A0656855

An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption

超低消費電力を特徴とする相変化RAMのためのエッジコンタクト型セル

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Author (8)： , , , , , , ,
Material：
Volume： 2003 Page： 175-176 Publication year： 2003
JST Material Number： A0035B ISSN： 0743-1562 Document type： Proceedings
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor integrated circuit , Materials of solid-state devices

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