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J-GLOBAL ID:200902252815734409   Reference number:04A0568137

Enhanced photoluminescence of InAs self-assembled quantum dots grown by molecular-beam epitaxy using a “nucleation-augmented” method

“核生成増強”法を用いた分子線エピタキシーにより成長させたInAs自己形成量子ドットの増強された光ルミネセンス
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Volume: 85  Issue:Page: 567-569  Publication year: Jul. 26, 2004 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semiconductor thin films  ,  Luminescence of semiconductors 

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