Art
J-GLOBAL ID：200902253085308332
Reference number：09A0729746
Highly ordered hexagonally arranged sub-200nm diameter vertical cylindrical pores on p-type Si using non-lithographic pre-patterning of the Si substrate
リソグラフィー技術を使わずシリコン基板のプリパターンニングで作製したp型シリコン基板上の直径200nm以下の高度に秩序化した六方晶配列垂直円筒ポア
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Author (3)：
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Material：
Volume：
206
Issue：
6
Page：
1286-1289
Publication year：
Jun. 2009
JST Material Number：
D0774A
ISSN：
1862-6300
CODEN：
PSSABA
Document type：
Article
Article type：
原著論文
Country of issue：
Germany, Federal Republic of (DEU)
Language：
ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
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Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Techniques for samples
, Surface structure of semiconductors
Terms in the title (9)：
Terms in the title
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