Art

J-GLOBAL ID：200902255432686620   Reference number：09A0123476

Direct domain writing in CSD-derived PZT thin films by AFM

CSD生成PZT薄膜へのAFMによる直接ドメイン書き込み

Author (5)： SUZUKI H. (Shizuoka Univ., Hamamatsu, JPN) ,  WAKIYA N. (Shizuoka Univ., Hamamatsu, JPN) ,  SAKAMOTO N. (Shizuoka Univ., Hamamatsu, JPN) ,  HOSHI Y. (Shizuoka Univ., Hamamatsu, JPN) ,  AKEDO J. (AIST, Ibaraki, JPN)
Material： Transactions of the Materials Research Society of Japan  (Trans Mater Res Soc Jpn)
Volume： 33  Issue： 4  Page： 1243-1245  Publication year： Dec. 2008 
JST Material Number： L4468A  ISSN： 1382-3469  Document type： Proceedings
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *lead zirconate titanate ,  *ferroelectrics ,  *dielectric thin film ,  solution growth ,  *atomic force microscope ,  domain ,  chemical composition ,  mole ratio ,  dielectric property ,  substrate (plate) ,  silicon ,  carboxylate (salt) ,  lead compound ,  titanium compound ,  alcoholate ,  zirconium compound ,  switching ,  annealing (heat treatment) ,  electric field ,  fatty acid ,  *domain structure
Semi thesaurus term： AFM (microscope) ,  *CSD method ,  *PZT ,  anneal ,  *domain ,  *direct drawing ,  dielectric property

JST classification (2)： Oxide thin films  (BK14050P) ,  Ferroelectrics,antiferroelectrics and ferroelasticity  (BM05030B)

Substance index (3)： Titanium(IV)tetraisopropoxide ,  Zirconium(IV)tetrapropoxide ,  Lead acetate

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Terms in the title (6)： CSD ,  PZT ,  薄膜 ,  AFM ,  ドメイン ,  書き込み