Art
J-GLOBAL ID：200902255987775939   Reference number：03A0017645

Maturing ion-implantation technology and its device applications in SiC.

完成しつつあるSiC中へのイオン注入技術とそのデバイスへの応用
Author (1)：
RAO M V

About RAO M V

(George Mason Univ., VA, USA)

About George Mason Univ., VA, USA


Material：
Solid-State Electronics  (Solid-State Electron)

About Solid-State Electronics


Volume： 47  Issue： 2  Page： 213-222  Publication year： Feb. 2003 
JST Material Number： H0225A  ISSN： 0038-1101  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
Thesaurus term：
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Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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*silicon carbide

About silicon carbide

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Irradiational changes semiconductors 
(BK16123E)

About Irradiational changes semiconductors

,  Manufacturing technology of solid-state devices 
(NC03030V)

About Manufacturing technology of solid-state devices

Terms in the title (3)：
Terms in the title
Keywords automatically extracted from the title.
SiC

About SiC

, 
イオン注入

About イオン注入

, 
応用

About 応用


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