Art

J-GLOBAL ID：200902256556058489   Reference number：08A0938795

Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode

Ta電極をもつCoO抵抗ランダムアクセスメモリにおける電圧極性依存低電力及び高速抵抗スイッチング

Author (7)： SHIMA Hisashi (Nanotechnology Res. Inst. (NRI), National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba Central 2 ...) ,  TAKANO Fumiyoshi (Nanotechnology Res. Inst. (NRI), National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba Central 2 ...) ,  MURAMATSU Hidenobu (Nanotechnology Res. Inst. (NRI), National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba Central 2 ...) ,  AKINAGA Hiro (Nanotechnology Res. Inst. (NRI), National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba Central 2 ...) ,  TAMAI Yukio (Advanced Technol. Res. Laboratories, Corporate Res. and Dev. Group, Sharp Corp., 1 Asahi, Daimon-cho, Fukuyama ...) ,  INQUE Isao H. (Correlated Electron Res. Center (CERC), National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba ...) ,  TAKAGI Hidenori (Correlated Electron Res. Center (CERC), National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba ...)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 93  Issue： 11  Page： 113504  Publication year： Sep. 15, 2008 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *RAM ,  *electric resistance ,  *cobalt oxide ,  *switching ,  *Tantalum ,  electrode ,  layer ,  oxide ,  transmission electron microscope ,  electron energy loss spectrum ,  electrical resistivity ,  affinity ,  interlayer

JST classification (2)： Other solid-state devices  (NC03150A) ,  Electric conduction in other inorganic compounds  (BM03044O)

Terms in the title (6)： Ta ,  CoO ,  抵抗ランダムアクセスメモリ ,  極性 ,  低電力 ,  抵抗スイッチング