Art

J-GLOBAL ID：200902256682236589   Reference number：05A0639382

Strong enhancement and long-time stabilization of porous silicon photoluminescence by laser irradiation

レーザ照射による多孔性シリコン光ルミネセンスの強い増強と長時間安定化

Author (6)： FUJIWARA Makoto (Fac. of Information Sciences, Hiroshima City Univ., 3-4-1 Ozukahigashi, Asaminami-ku, Hiroshima 731-3194, JPN) ,  MATSUMOTO Takuya (Fac. of Information Sciences, Hiroshima City Univ., 3-4-1 Ozukahigashi, Asaminami-ku, Hiroshima 731-3194, JPN) ,  KOBAYASHI Hiroyuki (Fac. of Information Sciences, Hiroshima City Univ., 3-4-1 Ozukahigashi, Asaminami-ku, Hiroshima 731-3194, JPN) ,  TANAKA Koichi (Fac. of Information Sciences, Hiroshima City Univ., 3-4-1 Ozukahigashi, Asaminami-ku, Hiroshima 731-3194, JPN) ,  HAPPO Naohisa (Fac. of Information Sciences, Hiroshima City Univ., 3-4-1 Ozukahigashi, Asaminami-ku, Hiroshima 731-3194, JPN) ,  HORII Kenju (Fac. of Information Sciences, Hiroshima City Univ., 3-4-1 Ozukahigashi, Asaminami-ku, Hiroshima 731-3194, JPN)
Material： Journal of Luminescence  (J Lumin)
Volume： 113  Issue： 3-4  Page： 243-248  Publication year： Jun. 2005 
JST Material Number： D0731A  ISSN： 0022-2313  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *laser irradiation ,...

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JST classification (2)： Luminescence of semiconductors  (BM08092S) ,  Inorganic compounds and elements in general  (CD01010D)

Terms in the title (6)： レーザ照射 ,  多孔性シリコン ,  光ルミネセンス ,  増強 ,  長時間 ,  安定化