Art
J-GLOBAL ID：200902258376935077   Reference number：05A0196717

EFFECT OF GROWTH TEMPERATURE ON LATTICE RELAXATION DURING SiGe GROWTH ON Si SUBSTRATE

Si基板上におけるSiGe成長中の格子緩和への成長温度の影響
Author (5)：
MORIYAMA Y

About MORIYAMA Y

(ASET, Kawasaki, JPN)

About ASET, Kawasaki, JPN

, 
SUGIYAMA N

About SUGIYAMA N

(ASET, Kawasaki, JPN)

About ASET, Kawasaki, JPN

, 
HIRASHITA N

About HIRASHITA N

(ASET, Kawasaki, JPN)

About ASET, Kawasaki, JPN

, 
NAKAHARAI S

About NAKAHARAI S

(ASET, Kawasaki, JPN)

About ASET, Kawasaki, JPN

, 
TAKAGI S

About TAKAGI S

(Univ. Tokyo)

About Univ. Tokyo


Material：
SiGe: Materials, Processing, and Devices  (SiGe Mater Process Divices)

About SiGe: Materials, Processing, and Devices


Page： 849-856  Publication year： 2004 
JST Material Number： K20050013  ISBN： 1-56677-420-9  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
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Keywords indexed to the article.
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*solid solution

About solid solution

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films 
(BK14040E)

About Semiconductor thin films

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
Si基板

About Si基板

, 
SiGe

About SiGe

, 
成長

About 成長

, 
格子緩和

About 格子緩和

, 
成長温度

About 成長温度


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