Art

J-GLOBAL ID：200902259111995066   Reference number：07A0110899

Nano-crater formation on a Si(111)-(7×7) surface by slow highly charged ion-impact

低速多価イオン-衝撃によるSi(111)-(7×7)表面におけるナノ-クレータ形成

Author (13)： TONA Masahide (Inst. for Laser Sci. and Dep. of Applied Physics and Chemistry, Univ. of Electro-Communications, Chofu, Tokyo ...) ,  TONA Masahide (Japan Sci. and Technol. Agency, Chofu, Tokyo 182-8585, JPN) ,  WATANABE Hirofumi (Inst. for Laser Sci. and Dep. of Applied Physics and Chemistry, Univ. of Electro-Communications, Chofu, Tokyo ...) ,  WATANABE Hirofumi (Japan Sci. and Technol. Agency, Chofu, Tokyo 182-8585, JPN) ,  TAKAHASHI Satoshi (Inst. for Laser Sci. and Dep. of Applied Physics and Chemistry, Univ. of Electro-Communications, Chofu, Tokyo ...) ,  NAKAMURA Nobuyuki (Inst. for Laser Sci. and Dep. of Applied Physics and Chemistry, Univ. of Electro-Communications, Chofu, Tokyo ...) ,  YOSHIYASU Nobuo (Inst. for Laser Sci. and Dep. of Applied Physics and Chemistry, Univ. of Electro-Communications, Chofu, Tokyo ...) ,  SAKURAI Makoto (Dep. of Physics, Kobe Univ., Kobe, Hyogo 657-8501, JPN) ,  TERUI Toshifumi (National Inst. of Information and Communications Technol., Iwaoka, Kobe 651-2492, JPN) ,  MASHIKO Shinro (National Inst. of Information and Communications Technol., Iwaoka, Kobe 651-2492, JPN) ,  YAMADA Chikashi (Inst. for Laser Sci. and Dep. of Applied Physics and Chemistry, Univ. of Electro-Communications, Chofu, Tokyo ...) ,  OHTANI Shunsuke (Inst. for Laser Sci. and Dep. of Applied Physics and Chemistry, Univ. of Electro-Communications, Chofu, Tokyo ...) ,  OHTANI Shunsuke (Japan Sci. and Technol. Agency, Chofu, Tokyo 182-8585, JPN)
Material： Surface Science  (Surface Science Letters)
Volume： 601  Issue： 3  Page： 723-727  Publication year： Feb. 01, 2007 
JST Material Number： C0129B  ISSN： 0039-6028  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： crater ,...
Semi thesaurus term： Coulomb explosion

   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=07A0110899&from=J-GLOBAL&jstjournalNo=C0129B") }}

JST classification (2)： Surface structure of semiconductors  (BK15030A) ,  Solid-gos interface in general.  (CB12041H)

Terms in the title (5)： 低速 ,  多価イオン ,  衝撃 ,  Si ,  クレータ