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J-GLOBAL ID：200902259289393434   Reference number：05A0535166

Mobility and Number Fluctuations in MOS Structures

MOSFET構造における移動度揺動と数揺動

Author (7)： HAMAYOSHI Shinichi (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  NAKAMOTO Takayuki (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  WADA Masanori (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  OHKURA Kensaku (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  TABEI Tetsuo (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  IKEDA Mitsuhisa (Hiroshima Univ., Higashi-Hiroshima, JPN) ,  HIGUCHI Katsuhiko (Hiroshima Univ., Higashi-Hiroshima, JPN)
Material： Japanese Journal of Applied Physics. Part 1. Regular Papers, Short Notes & Review Papers  (Japanese Journal of Applied Physics. Part 1. Regular Papers, Brief Communications & Review Papers)
Volume： 44  Issue： 4B  Page： 2198-2200  Publication year： Apr. 30, 2005 
JST Material Number： G0520B  ISSN： 0021-4922  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *MOS structure ,...

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JST classification (2)： Metal-insulator-semiconductor structures  (BM03085X) ,  Transistors  (NC03070N)

Reference (8)：

• 1) A. L. McWhorter: Semiconductor Interface Physics (University of Philadelphia Press, Philadelphia, 1957).
• 2) F. N. Hooge: Phys. Lett. A 29 (1969) 139.
• 3) L. K. J. Vandamme, X. Li and D. Rigaud: IEEE Trans. Electron Devices 41 (1994) 1936.
• 4) R. Jarayaman and C. G. Sodini: IEEE Trans. Electron Devices 36 (1989) 1773.
• 5) K. S. Ralls, W. J. Skocpol, L. D. Jackel, R. E. Howard, L. A. Fetter, R. W. Epworth and D. M. Tennant: Phys. Rev. Lett. 52 (1984) 228.

Terms in the title (3)： MOSFET ,  移動度 ,  揺動