Formation of Shallow Junctions by HCl-Based Si Etch Followed by Selective Epitaxy of B-Doped Si<sub>1-x</sub>Ge<sub>x</sub> in RPCVD

ISHEDEN C; RADAMSON H H; SUVAR E; HELLSTROEM P-E; OESTLING M

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J-GLOBAL ID：200902259879093479 Reference number：04A0489871

Formation of Shallow Junctions by HCl-Based Si Etch Followed by Selective Epitaxy of B-Doped Si_1-xGe_x in RPCVD

HCl系Siエッチとそれに続くRPCVDにおけるBドープSi_1-xGe_xの選択的エピタクシーによる浅い接合の作製

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Volume： 151 Issue： 6 Page： C365-C368 Publication year： 2004
JST Material Number： C0285A ISSN： 1945-7111 CODEN： JESOAN Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Solid-solid interface , Inorganic compounds and elements in general , Transistors

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Formation of Shallow Junctions by HCl-Based Si Etch Followed by Selective Epitaxy of B-Doped Si1-xGex in RPCVD

Formation of Shallow Junctions by HCl-Based Si Etch Followed by Selective Epitaxy of B-Doped Si_1-xGe_x in RPCVD