Art
J-GLOBAL ID：200902260198699350   Reference number：03A0201686

Electrical investigation on low-pressure chemical-vapor-deposited and thermal-processed Si/SiGe on a SIMOX substrate.

SIMOX基板上に低圧化学蒸着し熱処理したSi/SiGeに関する電気的研究
Author (1)：
FUJINAGA K

About FUJINAGA K

(Hokkaido Inst. Technol., Sapporo, JPN)

About Hokkaido Inst. Technol., Sapporo, JPN


Material：
Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures  (Journal of Vacuum Science & Technology. B. Microelectronics Processing and Phenomena)

About Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures


Volume： 21  Issue： 1  Page： 326-328  Publication year： Jan. 2003 
JST Material Number： E0974A  ISSN： 1071-1023  CODEN： JVTBD9  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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*SIMOX

About SIMOX

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films 
(BK14040E)

About Semiconductor thin films

,  Transistors 
(NC03070N)

About Transistors

Terms in the title (6)：
Terms in the title
Keywords automatically extracted from the title.
SIMOX

About SIMOX

, 
低圧化学蒸着

About 低圧化学蒸着

, 
熱処理

About 熱処理

, 
Si

About Si

, 
SiGe

About SiGe

, 
研究

About 研究


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