Effects of carrier concentration on the dielectric function of ZnO:Ga and In<sub>2</sub>O<sub>3</sub>:Sn studied by spectroscopic ellipsometry: Analysis of free-carrier and band-edge absorption

FUJIWARA Hiroyuki; KONDO Michio

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J-GLOBAL ID：200902261446957015 Reference number：05A0421748

Effects of carrier concentration on the dielectric function of ZnO:Ga and In₂O₃:Sn studied by spectroscopic ellipsometry: Analysis of free-carrier and band-edge absorption

ZnO:GaおよびIn₂O₃:Snの誘電関数に対するキャリア濃度効果の分光エリプソメトリーによる研究自由キャリア吸収とバンド端吸収の分析

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Volume： 71 Issue： 7 Page： 075109.1-075109.10 Publication year： Feb. 2005
JST Material Number： D0746A ISSN： 1098-0121 CODEN： PRBMDO Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Electronic structure of crystalline semiconductors , Visible and ultraviolet spectra of semiconductors

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Effects of carrier concentration on the dielectric function of ZnO:Ga and In2O3:Sn studied by spectroscopic ellipsometry: Analysis of free-carrier and band-edge absorption

Effects of carrier concentration on the dielectric function of ZnO:Ga and In₂O₃:Sn studied by spectroscopic ellipsometry: Analysis of free-carrier and band-edge absorption