Art
J-GLOBAL ID：200902261960475658   Reference number：04A0702832

Site-dependent structural instability at the surroundings of the Si-H bond in hydrogenated amorphous silicon based wide-gap alloys

水素化非晶質シリコンに基づくワイドギャップ合金中,Si-H結合の周りの環境のサイトに依存した構造不安定性
Author (1)：
OHEDA H

About OHEDA H

(National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN)

About National Inst. Advanced Industrial Sci. and Technol., Ibaraki, JPN


Material：
Physical Review. B. Condensed Matter and Materials Physics  (Physical Review. B. Condensed Matter)

About Physical Review. B. Condensed Matter and Materials Physics


Volume： 69  Issue： 24  Page： 245203.1-245203.6  Publication year： Jun. 2004 
JST Material Number： D0746A  ISSN： 1098-0121  CODEN： PRBMDO  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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silicon

About silicon

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
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forbidden band

About forbidden band


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JST classification (1)：
JST classification
Category name(code) classified by JST.
Structure of amorphous semiconductors 
(BK04030O)

About Structure of amorphous semiconductors

Terms in the title (7)：
Terms in the title
Keywords automatically extracted from the title.
水素化

About 水素化

, 
非晶質シリコン

About 非晶質シリコン

, 
ギャップ

About ギャップ

, 
合金

About 合金

, 
Si-H結合

About Si-H結合

, 
環境

About 環境

, 
構造不安定性

About 構造不安定性


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