極薄Ge中間層を用いた歪緩和Ge/Si(001)界面の転位構造制御

YUKAWA KATSUNORI; MOCHIZUKI SHOGO; NAKATSUKA OSAMU; SAKAI AKIRA; TAKEDA SHINGO; KIMURA SHIGERU; KIMURA SHIGERU; SAKATA OSAMI; SUMITANI KAZUSHI; IZUNOME KOJI; SENDA TAKESHI; TOYODA EIJI; OGAWA MASATAKE; ZAIMA SHIGEAKI

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J-GLOBAL ID：200902262331893710 Reference number：06A0266091

極薄Ge中間層を用いた歪緩和Ge/Si(001)界面の転位構造制御

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Material：
Volume： 53rd Issue： 1 Page： 406 Publication year： Mar. 22, 2006
JST Material Number： Y0054A Document type： Proceedings
Article type：短報 Country of issue： Japan (JPN) Language： JAPANESE (JA)

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Semiconductor thin films , Lattice defects in semiconductors

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