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J-GLOBAL ID:200902264242987801   Reference number:05A0606067

Doping Effects on Thermoelectric Properties of Higher Manganese Silicides (HMSs, MnSi1.74) and Characterization of Thermoelectric Generating Module using p-Type (Al, Ge and Mo)-doped HMSs and n-Type Mg2Si0.4Sn0.6 Legs

高けい化マンガン(HMSs,MnSi1.74)の熱電におよぼすドーピング効果とp型(Al,GeおよびMo)ドープのHMSsとn型Mg2Si0.4Sn0.6脚を用いる熱電気発生モジュールの特性評価
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Volume: 44  Issue: 6A  Page: 4275-4281  Publication year: Jun. 15, 2005 
JST Material Number: G0520B  ISSN: 0021-4922  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Electric conduction in crystalline semiconductors 
Reference (20):
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  • 4) H. W. Knott, M. H. Mueller and L. Heaton: Acta Crystallogr. 23 (1967) 549.
  • 5) V. K. Zaitsev and M. I. Fedorov: Semiconductor 29 (1995) 490.
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