20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate

IWAKAMI Shinichi; MACHIDA Osamu; YANAGIHARA Masataka; EHARA Toshihiro; KANEKO Nobuo; GOTO Hirokazu; IWABUCHI Akio

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J-GLOBAL ID：200902264294886868 Reference number：07A0679673

20 mΩ, 750 V High-Power AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate

Si基板上の20mΩ,750V高出力AlGaN/GaNヘテロ構造電界効果トランジスタ

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Volume： 46 Issue： 20-24 Page： L587-L589 Publication year： Jun. 25, 2007
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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