Origin of the Tunnel Anisotropic Magnetoresistance in Ga1-xMnxAs/ZnSe/Ga1-xMnxAs Magnetic Tunnel Junctions of II-VI/III-V Heterostructures

SAITO H.; YUASA S.; ANDO K.

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J-GLOBAL ID：200902265277628924 Reference number：05A0810547

Origin of the Tunnel Anisotropic Magnetoresistance in Ga_1-xMn_xAs/ZnSe/Ga_1-xMn_xAs Magnetic Tunnel Junctions of II-VI/III-V Heterostructures

II-VI/III-Vヘテロ構造のGa_1-xMn_xAs/ZnSe/Ga_1-xMn_xAs磁気トンネル接合におけるトンネル異方性磁気抵抗の起源

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Material：
Volume： 95 Issue： 8 Page： 086604.1-086604.4 Publication year： Aug. 19, 2005
JST Material Number： H0070A ISSN： 0031-9007 CODEN： PRLTAO Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor-semiconductor contacts with Gr.13-15 element compounds

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