Art
J-GLOBAL ID：200902265708957610   Reference number：04A0365105

Silicon-oxide etching process employing an electron-beam-excited plasma

電子ビーム励起プラズマによるシリコン酸化物エッチングプロセス
Author (7)：
ITO M

About ITO M

(Wakayama Univ., Wakayama, JPN)

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, 
TAKEDA K

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(Wakayama Univ., Wakayama, JPN)

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, 
SHIINA T

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(Wakayama Univ., Wakayama, JPN)

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, 
OKAMURA Y

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(Wakayama Univ., Wakayama, JPN)

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, 
NAGAI H

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(Nagoya Univ., Nagoya, JPN)

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, 
HORI M

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(Nagoya Univ., Nagoya, JPN)

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, 
GOTO T

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(Nagoya Univ., Nagoya, JPN)

About Nagoya Univ., Nagoya, JPN


Material：
Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures  (Journal of Vacuum Science & Technology. B. Microelectronics Processing and Phenomena)

About Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures


Volume： 22  Issue： 2  Page： 543-547  Publication year： Mar. 2004 
JST Material Number： E0974A  ISSN： 1071-1023  CODEN： JVTBD9  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
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*electron beam

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,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
電子ビーム励起プラズマ

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,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Manufacturing technology of solid-state devices 
(NC03030V)

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,  Plasma diagnostics 
(BJ02090L)

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Substance index (1)：
Substance index
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Tetrafluoromethane

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Terms in the title (3)：
Terms in the title
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プラズマ

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, 
シリコン酸化物

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, 
エッチングプロセス

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