Art

J-GLOBAL ID：200902266443140109   Reference number：06A0042121

Investigations of Carrier Deflection in the Semiconductor Sensors

半導体磁気センサにおけるキャリア偏向の検討

Author (2)： KIMURA MITSUTERU (東北学院大) ,  TAKASHIMA NORIAKI (東北学院大)
Material： 電気学会フィジカルセンサ研究会資料  (電気学会研究会資料)
Volume： PHS-05  Issue： 31-34  Page： 1-5  Publication year： 2005 
JST Material Number： L2897B  Document type： Proceedings
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： *magnetic sensor ,...

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JST classification (2)： Measuring methods and instruments of magnetism  (AD07060U) ,  Transistors  (NC03070N)

Reference (10)：

• HUDSON, E. C. jr. USA Patent #3,389,230. 1968
• VIKULIN, I. M. Investigation of the characteristics of a two-collector magneto transistor. Soviet Physics-Semiconductors. 1974, 8, 369-370
• VINAL, Albert W. Operating Principles of Bipolar Transistor Magnetic Sensors. IEEE Transaction on Electron Device. 1984, ED-31, 10, 1486-1494
• VINAL, A. W. Magnetic Transistor Behavior Explained by Modulation of Emitter Injection, not Carrier Deflection. IEEE Electron Device Letters. 1982, EDL-3, 8, 203-205
• ZIEREN, V. Comment on 'Magnetic Transistor Behavior Explained by Modulation of Emitter Injection, not Carrier Deflection'. IEEE Electron Device Letters. 1982, EDL-3, 12, 394-395

Terms in the title (3)： 磁気センサ ,  キャリア ,  偏向