Art

J-GLOBAL ID：200902266509221440   Reference number：07A1216172

A band-pass filter based on the optically controllable S₂₂ parameter of a MESFET

金属半導体電界効果トランジスタ(MESFET)の光で制御できるパラメータS₂₂に基づいたバンドパスフィルタ

Author (2)： MIKUMO Satoshi (Kusumoto Patent Office) ,  YAMAMOTO Yukio (Dep. of Electrical Engineering and Electronics, Fac. of Engineering, Osaka Sangyo Univ.)
Material： IEICE Electronics Express (Web)  (IEICE Electron Express (Web))
Volume： 2  Issue： 3  Page： 86-90 (J-STAGE)  Publication year： 2005 
JST Material Number： U0039A  ISSN： 1349-2543  Document type： Article
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *band pass filter ,...
Semi thesaurus term： active filter ,...

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JST classification (1)： Digital filter  (NC04022Z)

Reference (7)：

• [1] Y. Yamamoto, K. Kawasaki, and T. Itoh, “A MESFET controlled X-band active band pass filter, ” IEEE Trans. Microwave Guided Wave Lett., vol. 1, pp. 110-111, 1991.
• [2] Y. Yamamoto and T. Itoh, “Optical control of microwave integrated circuits, ” 1991 Microwave Workshop and Exhibition (MWE'91) Microwave Workshop Dig., pp. 115-120.
• [3] J. Lin, C. Y. Chang, Y. Yamamoto, and T. Itoh, “Progress of a tunable active bandpass filter, ” Annals Telecomm., vol. 47, pp. 499-507, 1992.
• [4] R. Simons, “Microwave performance of an optically controlled AlGaAs/GaAs High Electron Mobility Transistor and GaAs MESFET, ” IEEE Trans. Microwave Theory Tech., vol. 35, pp. 1444-1455, 1987.
• [5] A. Madjar, P. R. Herczfeld, and A. Paolella, “Analytical model for optically generated currents in GaAs MESFETs, ” IEEE Trans. Microwave Theory Tech., vol. 40, pp. 1681-1691, 1992.

Terms in the title (4)： 金属半導体電界効果トランジスタ ,  MESFET ,  パラメータ ,  バンドパスフィルタ