Art

J-GLOBAL ID：200902267209570716   Reference number：07A0266899

Multilevel Data Storage Characteristics of Phase Change Memory Cell with Doublelayer Chalcogenide Films (Ge₂Sb₂Te₅ and Sb₂Te₃)

二重層カルコゲナイド薄膜(Ge₂Sb₂Te₅およびSb₂Te₃)を用いた相変化記録セルに関する多準位データ記憶特性

Author (8)： RAO Feng (Shanghai Inst. Micro-System and Information Technol., Chinese Acad. Sci., Shanghai, CHN) ,  SONG Zhitang (Shanghai Inst. Micro-System and Information Technol., Chinese Acad. Sci., Shanghai, CHN) ,  ZHONG Min (Shanghai Inst. Micro-System and Information Technol., Chinese Acad. Sci., Shanghai, CHN) ,  WU Liangcai (Shanghai Inst. Micro-System and Information Technol., Chinese Acad. Sci., Shanghai, CHN) ,  FENG Gaoming (Shanghai Inst. Micro-System and Information Technol., Chinese Acad. Sci., Shanghai, CHN) ,  LIU Bo (Shanghai Inst. Micro-System and Information Technol., Chinese Acad. Sci., Shanghai, CHN) ,  FENG Songlin (Shanghai Inst. Micro-System and Information Technol., Chinese Acad. Sci., Shanghai, CHN) ,  CHEN Bomy (Silicon Storage Technol., Inc., CA, USA)
Material： Japanese Journal of Applied Physics. Part 2. Letters  (Japanese Journal of Applied Physics. Part 2. Letters & Express Letters)
Volume： 46  Issue： 1-3  Page： L25-L27  Publication year： Jan. 25, 2007 
JST Material Number： F0599B  ISSN： 0021-4922  Document type： Article
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *optical disk ,...
Semi thesaurus term： chalcogenide glass ,...

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JST classification (2)： Electronic recording,magnetic recording,optical recording  (NC06020F) ,  Semiconductor thin films  (BK14040E)

Reference (16)：

• LAI, S. IEDM Tech. Dig., 2000. 2000, 243
• LAI, S. IEDM Tech. Dig., 2001. 2001, 803
• OVSHINSKY, S. R. Phys. Rev. Lett. 1968, 21, 1450
• LAI, S. IEDM Tech. Dig., 2003. 2003, 255
• ANDERSON, T. L. Acta Crystallogr., Sect. B. 1974, 30, 1307

Terms in the title (6)： 二重層 ,  カルコゲナイド ,  薄膜 ,  相変化 ,  セル ,  記憶特性