Art
J-GLOBAL ID：200902267336039990   Reference number：07A0478724

Band-Edge Luminescence at Room Temperature of Boron Nitride Synthesized by Thermal Chemical Vapor Phase Deposition

熱化学蒸着で合成した窒化ほう素の室温におけるバンド端ルミネセンス
Author (3)：
TSUDA Osamu

About TSUDA Osamu

(National Inst. of Materials Sci., Ibaraki, JPN)

About National Inst. of Materials Sci., Ibaraki, JPN

, 
WATANABE Kenji

About WATANABE Kenji

(National Inst. of Materials Sci., Ibaraki, JPN)

About National Inst. of Materials Sci., Ibaraki, JPN

, 
TANIGUCHI Takashi

About TANIGUCHI Takashi

(National Inst. of Materials Sci., Ibaraki, JPN)

About National Inst. of Materials Sci., Ibaraki, JPN


Material：
Japanese Journal of Applied Physics. Part 2. Letters  (Japanese Journal of Applied Physics. Part 2. Letters & Express Letters)

About Japanese Journal of Applied Physics. Part 2. Letters


Volume： 46  Issue： 12-16  Page： L287-L290  Publication year： Apr. 25, 2007 
JST Material Number： F0599B  ISSN： 0021-4922  Document type： Article
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)
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Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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*boron nitride

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,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films 
(BK14040E)

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,  Luminescence of semiconductors 
(BM08092S)

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Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
熱化学蒸着

About 熱化学蒸着

, 
窒化ほう素

About 窒化ほう素

, 
室温

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, 
バンド端

About バンド端

, 
ルミネセンス

About ルミネセンス


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