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J-GLOBAL ID:200902267991924009   Reference number:07A1096406

High-Characteristic-Temperature 1.3-μm-Band Laser on an InGaAs Ternary Substrate Grown by the Traveling Liquidus-Zone Method.

液相線移動ゾーン成長法で作ったInGaAs三成分基板上の高特性温度1.3μmバンドレーザ
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Volume: 13  Issue: 5,Pt.1  Page: 1295-1301  Publication year: Sep. 2007 
JST Material Number: W0734A  ISSN: 1077-260X  CODEN: IJSQEN  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semiconductor lasers 
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