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J-GLOBAL ID：200902269970029266   Reference number：06A0156799

Reversible resistive switching of SrTiOx thin films for nonvolatile memory applications

不揮発性メモリ応用に対するSrTiO_x薄膜の可逆抵抗スイッチング

Author (5)： CHOI Dooho (Dep. of Materials Sci. and Engineering, Gwangju Inst. of Sci. and Technol. (GIST), Gwangju 500-712, KOR) ,  LEE Dongsoo (Dep. of Materials Sci. and Engineering, Gwangju Inst. of Sci. and Technol. (GIST), Gwangju 500-712, KOR) ,  SIM Hyunjun (Dep. of Materials Sci. and Engineering, Gwangju Inst. of Sci. and Technol. (GIST), Gwangju 500-712, KOR) ,  CHANG Man (Dep. of Materials Sci. and Engineering, Gwangju Inst. of Sci. and Technol. (GIST), Gwangju 500-712, KOR) ,  HWANG Hyunsang (Dep. of Materials Sci. and Engineering, Gwangju Inst. of Sci. and Technol. (GIST), Gwangju 500-712, KOR)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 88  Issue： 8  Page： 082904-082904-3  Publication year： Feb. 20, 2006 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： RAM ,...
Semi thesaurus term： data storage

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JST classification (2)： Oxide thin films  (BK14050P) ,  Electronic recording,magnetic recording,optical recording  (NC06020F)

Terms in the title (4)： 不揮発性メモリ ,  応用 ,  薄膜 ,  抵抗スイッチング