Art
J-GLOBAL ID:200902270048052770   Reference number:03A0636526

Simulation of Intrinsic Parameter Fluctuations in Decananometer and Nanometer-Scale MOSFETs

デカナノメータおよびナノメータ規模MOSFETにおける固有パラメータゆらぎのシミュレーション
Author (5):
Material:
Volume: 50  Issue:Page: 1837-1852  Publication year: Sep. 2003 
JST Material Number: C0222A  ISSN: 0018-9383  CODEN: IETDAI  Document type: Article
Article type: 文献レビュー  Country of issue: United States (USA)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=03A0636526&from=J-GLOBAL&jstjournalNo=C0222A") }}
JST classification (1):
JST classification
Category name(code) classified by JST.
Transistors 

Return to Previous Page