Electric conductance through chemical bonding states being formed between a Si tip and a Si(111)-(7×7) surface by bias-voltage noncontact atomic force spectroscopy

ARAI T.; ARAI T.; TOMITORI M.

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J-GLOBAL ID：200902270091376260 Reference number：06A0293862

Electric conductance through chemical bonding states being formed between a Si tip and a Si(111)-(7×7) surface by bias-voltage noncontact atomic force spectroscopy

バイアス電圧非接触原子間力分光法によるSiチップとSi(111)-(7×7)表面の間に形成された化学結合状態を通る電気コンダクタンス

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Author (3)： , ,
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Volume： 73 Issue： 7 Page： 073307.1-073307.4 Publication year： Feb. 2006
JST Material Number： D0746A ISSN： 1098-0121 CODEN： PRBMDO Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Study of adsorption by physical means

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