Art

J-GLOBAL ID：200902270436375580   Reference number：08A0251897

Top-gated graphene field-effect-transistors formed by decomposition of SiC

SiCの分解によって作製したトップゲートを備えたグラフェンから成る電界効果トランジスター

Author (11)： WU Y. Q. (School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue Univ., West Lafayette, Indiana ...) ,  YE P. D. (School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue Univ., West Lafayette, Indiana ...) ,  CAPANO M. A. (School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue Univ., West Lafayette, Indiana ...) ,  XUAN Y. (School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue Univ., West Lafayette, Indiana ...) ,  SUI Y. (School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue Univ., West Lafayette, Indiana ...) ,  QI M. (School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue Univ., West Lafayette, Indiana ...) ,  COOPER J. A. (School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue Univ., West Lafayette, Indiana ...) ,  SHEN T. (Dep. of Physics and Birck Nanotechnology Center, Purdue Univ., West Lafayette, Indiana 47907, USA) ,  PANDEY D. (Dep. of Physics and Birck Nanotechnology Center, Purdue Univ., West Lafayette, Indiana 47907, USA) ,  PRAKASH G. (Dep. of Physics and Birck Nanotechnology Center, Purdue Univ., West Lafayette, Indiana 47907, USA) ,  REIFENBERGER R. (Dep. of Physics and Birck Nanotechnology Center, Purdue Univ., West Lafayette, Indiana 47907, USA)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 92  Issue： 9  Page： 092102  Publication year： Mar. 03, 2008 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： silicon carbide ,  gate(semiconductor) ,  *graphite ,  *FET ,  thermal decomposition ,  substrate(plate) ,  dielectrics ,  vapor phase growth ,  silicon dioxide ,  multilayer ,  vector(mathematics) ,  two dimension ,  hexagonal system ,  scanning tunneling microscope ,  transport phenomenon ,  carrier mobility ,  *graphene

JST classification (2)： Transistors  (NC03070N) ,  Carbon and its compounds  (YB02060D)

Terms in the title (7)： SiC ,  分解 ,  作製 ,  トップ ,  ゲート ,  グラフェン ,  電界効果トランジスター