Art
J-GLOBAL ID：200902271209474510
Reference number：04A0806219
Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices
ハイパワー電子素子用のシリコンカーバイドの成長制御における技術的ブレークスルー
-
Publisher site
Copy service
{{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=04A0806219©=1") }}
-
Access JDreamⅢ for advanced search and analysis.
{{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=04A0806219&from=J-GLOBAL&jstjournalNo=G0520B") }}
Author (1)：
Material：
Volume：
43
Issue：
10
Page：
6835-6847
Publication year：
Oct. 15, 2004
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
文献レビュー
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films
Reference (106)：
-
1) Yu. M. Tairov and V. F. Tsvetkov: J. Cryst. Growth 43 (1978) 209.
-
2) N. Kuroda, K. Shibahara, W. S. Yoo, S. Nishino and H. Matsunami: Ext. Abstr. 34th Spring Meeting of Japan Society Applied Physics and Related Societies, Tokyo, 1987, p. 135 [in Japanese].
-
3) N. Kuroda, K. Shibahara, W. S. Yoo, S. Nishino and H. Matsunami: Ext. Abstr. 19th Conf. on Solid State Devices and Materials, Tokyo, 1987, p. 227.
-
4) A. R. Verma and P. Krishna: <I>Polymorphysm and Polytypism in Crystals</I> (John Wiley & Sons, New York, 1966).
-
5) V. J. Jennings, A. Sommer and H. Chang: J. Electrochem. Soc. 113 (1966) 728.
ｍore...
Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
,
,
,
,
Return to Previous Page
